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The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorpo...

Graphene field-effect transistors (gFETs) are promising tools for the development of precise and affordable techniques for the study of molecular binding kinetics, crucial in applications such as biomolecule therapies, d...

We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layer...

Sensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the o...

Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect tr...

Abstract Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. T...

Field effect transistors have shown promising performance as terahertz (THz) detectors over the past few decades. Recently, a quantum phenomenon, the in-plane photoelectric effect, was discovered as a novel detection mec...

Optical image sensors are 2D arrays of pixels that integrate semiconductor photodiodes and field effect transistors for efficient photon conversion and processing of generated electrons. With technological advancements a...

In this study, we investigated the degradation mechanisms of silicon carbide asymmetric trenches of metal-oxide semiconductor field-effect transistors (SiC AT-MOSFETs) under power cycling tests (PCTs). After 60000 cycles...

Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite...

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large in...

Abstract The space microgravity environment, scarcely attainable on Earth, is considered to have a positive effect on crystal growth, especially the van der Waals layered materials with low interlayer sliding energy barr...

The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate ont...

Abstract The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the fiel...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...