Search academic resources

Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ...

We present a feasible way to strongly enhance Raman signals via introducing an ultra-thin dielectric film in the dual-layer plasmonic hotspots structure, which forms a quasi-three-dimensional structure. The Raman intensi...

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed ...

Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, info...

We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple dev...

Efficient exciton transport over long distances is crucial for organic optoelectronics. Despite efforts to improve the transport properties of organic semiconductors, the limited exciton diffusion remains a significant o...

Transition metal dichalcogenides are two-dimensional semiconductors with strong in-plane covalent and weak out-of-plane interactions, resulting in exfoliation into monolayers with atomically thin thickness. This creates ...

Direct laser interference patterning (DLIP) is a laser-based surface structuring method that stands out for its high throughput, flexibility and resolution for laboratory and industrial manufacturing. This top–down tec...

Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-opti...

Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must b...

Transition-metal-doped semiconductor nanocrystals have received significant attention because of their attractive features deeming them invaluable in various technological fields including optoelectronics, bio-photonics,...

Borophene Quantum Dots (BPQDs) have been shown to exhibit unique properties that make them suitable as zero-dimensional nanomaterials. These properties include optical, structural, electrical, mechanical, photophysical, ...

Unipolar quantum optoelectronics is emerging as a promising semiconductor platform for developing mid-infrared applications, particularly spectroscopy and free-space communications. In this work, we present a proof of pr...

Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-i...

Photodetectors based on semiconducting materials are vital building blocks for modern systems containing optoelectronic modules. Although commercial semiconductors have established good performances, they are plagued by ...

We theoretically and numerically demonstrate that the spontaneous parity-time (PT) symmetry breaking phase transition can be realized respectively by using two independent tuning ways in a tri-layered metamaterial that c...

Achieving high transmission of light through a highly conductive structure implemented on a semiconductor remains a challenge in optoelectronics as the transmission is inevitably deteriorated by absorption and Fresnel re...

The transition metal dichalcogenides (TMDs) have drawn great research attention, motivated by the derived remarkable optoelectronic properties and the potentials for high-efficient excitonic devices. The plasmonic nanoca...

Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility Im χ3 is ...

We present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The ex...

Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical fu...

Abstract The systemic behavior of a Semiconductor Optical Amplifier model was optimized through extensive simulations, reaching reasonable approximation to experimental obtained from commercial devices for the optical ga...

Abstract A characterization technique, including a mathematical model involving extensive computational resources, is introduced to study the behavior of an electro-optical space switch based on semiconductor optical amp...

Abstract Microwave pulse bursts were obtained through optical domain intensity modulated microwave carriers, sliced by cascaded modulator technique, followed by non-linear semiconductor optical amplifier (SOA) pre-chirp....