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Silicon is the dominant material in complementary metal-oxide-semiconductor (CMOS) imaging devices because of its outstanding electrical and optical properties, well-established fabrication methods, and abundance in natu...

Subwavelength grating-based color-shifting devices exhibit dynamically tunable spectral responses under specific resonant conditions, offering advanced applications in optical anticounterfeiting and surface decoration. H...

By color-converting the violet laser diode (VLD) with a cadmium selenide and zinc sulfide (CdSe/ZnS) core-shell-quantum dot (QD) doped polydimethylsiloxane (PDMS) film, the VLD + CdSe/ZnS core-shell-QD transferred wh...

Vanadium dioxide (VO2) is an attractive thermal-control material exhibiting low thermal hysteresis and excellent temperature cycling performance. However, the deficiencies including weak spectral shift and narrow-band ab...

In this work, a series of three and four-color tandem white organic light-emitting diodes (WOLEDs) are developed by using the optimized charge generating unit (CGU) to connect two electroluminescence (EL) units with symm...

Structural colors generated by optical micro-/nanostructures offer a notable advantage over traditional chemical pigments, including higher purity, greater brightness, resistance to fading, and enhanced environmental fri...

Optical imaging and single-molecule imaging, in particular, utilize fluorescent tags in order to differentiate observed species by color. The degree of color multiplexing is dependent on the available spectral detection ...

Color centers in silicon have recently gained considerable attention as single-photon sources and as spin qubit-photon interfaces. However, one of the major bottlenecks to the application of silicon color centers is thei...