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Abstract This paper presents a set of design equations for spiral and new scalable cross inductors in CMOS 0.35 μm technology, relating electrical parameters of the inductor's equivalent circuit as functions of its geom...

This paper presents a power-efficient RF differential receiver front-end supporting transmitted-reference (TR) communication in a 90 nm CMOS technology. Particularly, it addresses the issues of designing the frontend amp...

A New True single-phase clock transistor using T flipflop (TSPC-T) is introduced to operate efficiently at low supply voltages (VDD) while ensuring high speed and reliability. T Flip-flop significantly minimizes unnecess...

This describes a low-energy voltage level shifter (LS) architecture. We further introduce a regulated cross-coupled (RCC) pull-up network to achieve a considerable reduction in dynamic power consumption with higher switc...

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as t...

Silicon (Si) offers cost-effective production and convenient on-chip integration for photodetection due to its well-established CMOS technology. However, the indirect bandgap of Si inherently limits its detection efficie...

Abstract With the increasing performance requirements for data acquisition in applications such as the Internet of things and artificial intelligence, analog-to-digital converters (ADCs) face stringent trade-offs among s...

Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide compact solution for functional devices, and its fabrication process is compatible with the mature complementary metal-oxide...

Dense and efficient circuits with component sizes approaching the physical limit is the hallmark of high performance integration. Ultimately, these features and their pursuit enabled the multi-decade lasting exponential ...

Metasurfaces have been widely exploited in imaging and sensing, holography, light–matter interaction, and optical communications in free space and on chip, thanks to their CMOS compatibility, versatility and compact fo...

As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilit...

Metamaterials, consisting of subwavelength resonant structures, can be artificially engineered to yield desired response to electromagnetic waves. In contrast to the naturally existing materials whose properties are limi...

Globally, the long-haul transmission of ultra-high bandwidth data is enabled through coherent communications. Driven by the rapid pace of growth in interconnectivity over the last decade, long-haul data transmission has ...

The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser source. Here, we report a monolithically integrated microbridge-based emitting-detecting configuration, equipped with lateral p–i...

Tunable nanophotonic metastructures offer new capabilities in computing, networking, and imaging by providing reconfigurability in computer interconnect topologies, new optical information processing capabilities, optica...

The article describes a method for measuring the concentration of glucose in human blood by non-invasive method using near-infrared optical technology. In medical practice, glucose concentration in the blood in most case...

An effective solution to enhance the capacity of an optical-interconnect link is utilizing advanced multiplexing technologies, like wavelength-division-multiplexing (WDM), polarization-division multiplexing (PDM), spatia...

Metasurfaces enable the redesign of optical components into thin, planar and multifunctional elements, promising a major reduction in footprint and system complexity as well as the introduction of new optical functions. ...

Abstract Vision-based robotic triaxial tactile sensing provides superior spatial resolution and rich multimodal data. However, employing rigid CMOS imagers suffers from limitations in mechanical flexibility and large-are...

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic cons...

Subjects / keywords: cmos technology, computer hardware, computer software, hardware trust and security, many-core systems, digital system design; Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer en...

Discussed are the problems of designing readout circuits for IR-wavelength photodiode arrays intended, for example, for reading and processing information from array radiation detectors based on materials such as InSb an...

Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite...

Over the past decade, significant advancements in high-resolution imaging technology have been driven by the miniaturization of pixels within image sensors. However, this reduction in pixel size to submicrometer dimensio...