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For the first time, the effect of B2O3 additive on the IR transmission spectra of ZrF4 and HfF4 samples and the optical properties of the coatings obtained from them was investigated. A significant difference in the shap...

The morphology of titanium, zirconium, and hafnium nanofilms deposited onto zirconia after annealing in vacuum at 1400, 1500, and 1600°C was studied. Nanofilms show a tendency to fragmentation; for titanium it begins at...

For the first time, the influence of a B2O3 additive on Magnesium, Zirconium, and Hafnium fluorides, encompassing their structural and optical properties, was subjected to investigation. The phase composition of the MgF2...

The influence of yttrium oxide impurity content of 0 to 0.4 wt.% on the structure and microhardness metal hafniuminvestigated. It is shown that grain size decreases and the Microhardness of hafnium increases monotonicall...

Two-dimensional (2D) ternary transition-metal dichalcogenides (TMDCs) are of great research interest because their superior layer-dependent optical modulation properties. In this work, three different kinds of TMDC nanos...

Interaction of hafnium with copper and tin was studied at 870 K over the whole concentration range using X-ray diffractometry and scanning electron microscopy. At the temperature of investigation three ternary compounds ...

Plasmonic structural color, in which vivid colors are generated via resonant nanostructures made of common plasmonic materials, such as noble metals have fueled worldwide interest in backlight-free displays. However, pla...

A study of the electron-hole conductivity in PbI2 single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and...

Novel 2D van der Waals semiconductors facilitate the formation of heterostructures and thus support bandgap engineering for atomically thin modern photonic applications. When these heterostructures form a type II band st...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...