Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques
Artículo
Artículo
In this work, the kinetic dependences of chemical-dynamic etching of semiconductor compounds GaAs, InAs, GaSb, and InSb in polishing etching mixtures based on H2O2–HBr without and with an organic solvent are investigat...
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