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58 risultati trovati.

Tipi di risorsa: Libro cartaceo Libro elettronico Articolo Rivista Tesi Capitolo
Ricerca accademica
Semiconductor Physics, Quantum Electronics & Optoelectronics
Articolo
Articolo
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.; Ukraine · ISSN 1560-8034
Materie / parole chiave: semiconductor physics, hetero- and low-dimensional structures, physics of microelectronic devices, linear and nonlinear solid-state optics, optoelectronics and optoelectronic devices, sensors; Science: Physics
Idioma English
Acceso abiertoRuta libre sin proxy. Acceso recomendado cuando no hay suscripción activa.Disponible en 2 proveedores
Open Access
Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
Articolo
Articolo
Slah Sheet et al · University of Mosul, College of Education for Pure Science · 2008 · ISSN 1812-125X
Abstract Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical A...
LCC TENDOkVkdWNhdGlvbg~~; LCC:Science (General)Idioma Inglés
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Open Access
Active topological photonics
Articolo
Articolo
Ota Yasutomo et al · Wiley · 2020 · ISSN 2192-8614
Topological photonics emerged as a novel route to engineer the flow of light. Topologically protected photonic edge modes, which are supported at the perimeters of topologically nontrivial insulating bulk structures, are...
LCC TENDOlBoeXNpY3M~Idioma Inglés
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Open Access
Boron nitride for excitonics, nano photonics, and quantum technologies
Articolo
Articolo
Gil Bernard et al · Wiley · 2020 · ISSN 2192-8606
We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple dev...
LCC TENDOlBoeXNpY3M~Idioma Inglés
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Open Access
Active angular tuning and switching of Brewster quasi bound states in the continuum in magneto-optic metasurfaces
Articolo
Articolo
Abujetas Diego R. et al · Wiley · 2021 · ISSN 2192-8614
Bound states in the continuum (BICs) emerge throughout physics as leaky/resonant modes that remain, however, highly localized. They have attracted much attention in photonics, and especially in metasurfaces. One of their...
LCC TENDOlBoeXNpY3M~Idioma Inglés
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Open Access
Deep reinforcement learning empowers automated inverse design and optimization of photonic crystals for nanoscale laser cavities
Articolo
Articolo
Li Renjie et al · Wiley · 2023 · ISSN 2192-8614
Photonics inverse design relies on human experts to search for a design topology that satisfies certain optical specifications with their experience and intuitions, which is relatively labor-intensive, slow, and sub-opti...
LCC TENDOlBoeXNpY3M~Idioma Inglés
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Open Access
Gate dielectric stack design for 2D materials-based electronics
Articolo
Articolo
Minho Jin et al · SpringerOpen · 2026 · ISSN 2196-5404
Abstract Two-dimensional (2D) semiconductors enable atomically thin channels and attractive electrostatics, but practical scaling increasingly hinges on gate-dielectric integration rather than channel performance. A key ...
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Open Access
Integrated nanoplasmonic waveguides for magnetic, nonlinear, and strong-field devices
Articolo
Articolo
Sederberg Shawn et al · Wiley · 2017 · ISSN 2192-8606
As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilit...
LCC TENDOlBoeXNpY3M~Idioma Inglés
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Open Access
Monolayer MoS2 for nanoscale photonics
Articolo
Articolo
Yang Xianguang et al · Wiley · 2020 · ISSN 2192-8606
Transition metal dichalcogenides are two-dimensional semiconductors with strong in-plane covalent and weak out-of-plane interactions, resulting in exfoliation into monolayers with atomically thin thickness. This creates ...
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Open Access
Optical tuning of the terahertz response of black phosphorus quantum dots: effects of weak carrier confinement
Articolo
Articolo
Liu Xuan et al · Wiley · 2023 · ISSN 2192-8614
In contrast to few-layer black phosphorus (BP) with a relatively larger area, BP quantum dots (BP-QDs) are expected to have distinctive electromagnetic response and carrier behaviors, especially in low-frequency range su...
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Open Access
Fractional Brownian Motions, Fractional Noises and Applications
Articolo
Articolo
Benoît B. Mandelbrot; John W. Van Ness · SIAM Review · 1968
Previous article Next article Fractional Brownian Motions, Fractional Noises and ApplicationsBenoit B. Mandelbrot and John W. Van NessBenoit B. Mandelbrot and John W. Van Nesshttps://doi.org/10.1137/1010093PDFBibTexSecti...
Idioma Inglés
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Página del recurso
Fundamentos de física para semiconductores /
Libro
Libro
Rodríguez Martínez, Jairo Alejandro · Ediciones USTA · 2018 · ISBN 9789587820461
Materie / parole chiave: Physics; Schrödinger equation; Semiconductors; Electronic books
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Institucional
Semiconductor Nanocrystals as Fluorescent Biological Labels
Articolo
Articolo
Marcel P. Bruchez; Mario M. Moronne; Peter Gin; Shimon Weiss; A. Paul Alivisatos · Science · 1998
Semiconductor nanocrystals were prepared for use as fluorescent probes in biological staining and diagnostics. Compared with conventional fluorophores, the nanocrystals have a narrow, tunable, symmetric emission spectrum...
Idioma Inglés
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<i>Ab initio</i>molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
Articolo
Articolo
Georg Kresse; J. Häfner · Physical review. B, Condensed matter · 1994
We present ab initio quantum-mechanical molecular-dynamics simulations of the liquid-metal--amorphous-semiconductor transition in Ge. Our simulations are based on (a) finite-temperature density-functional theory of the o...
Idioma Inglés
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Página del recurso
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
Articolo
Articolo
Fabien Tran; Peter Blaha · Physical Review Letters · 2009
A modified version of the exchange potential proposed by Becke and Johnson [J. Chem. Phys. 124, 221101 (2006)10.1063/1.2213970] is tested on solids for the calculation of band gaps. The agreement with experiment is very ...
Idioma Inglés
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Band parameters for III–V compound semiconductors and their alloys
Articolo
Articolo
I. Vurgaftman; J. R. Meyer; L. R. Ram‐Mohan · Journal of Applied Physics · 2001
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, In...
Idioma Inglés
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Página del recurso
Inhibited Spontaneous Emission in Solid-State Physics and Electronics
Articolo
Articolo
Eli Yablonovitch · Physical Review Letters · 1987
It has been recognized for some time that the spontaneous emission by atoms is not necessarily a fixed and immutable property of the coupling between matter and space, but that it can be controlled by modification of the...
Idioma Inglés
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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
Articolo
Articolo
T. Dietl; Hideo Ohno; F. Matsukura; J. Cibért; D. Ferrand · Science · 2000
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question ...
Idioma Inglés
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Página del recurso
Carbon Nanotubes--the Route Toward Applications
Articolo
Articolo
Ray H. Baughman; Anvar Zakhidov; Walt A. de Heer · Science · 2002
Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources...
Idioma Inglés
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Página del recurso
Electronic properties of two-dimensional systems
Articolo
Articolo
Tsuneya Ando; A. B. Fowler; Frank Stern · Reviews of Modern Physics · 1982
The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor...
Idioma Inglés
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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Articolo
Articolo
Andrea Splendiani; L. Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi Yung Chim; Giulia Galli; Feng Wang · Nano Letters · 2010
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is t...
Idioma Inglés
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