Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review
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Abstract High-electron-mobility transistors (HEMTs) based on wide bandgap (WBG) materials like gallium nitride (GaN) are vital for next-generation power electronics and high-frequency applications, offering high breakdow...
LCC LCC:Materials of engineering and construction. Mechanics of materialsIdioma eng
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