Electrical Instability of CdTe:Si Crystals
Artículo
Acceso abierto
Artículo
DOAJ
Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably...
LCC TENDOlBoeXNpY3M~Idioma eng
Acceso abiertoRuta libre sin proxy. Acceso recomendado cuando no hay suscripción activa.
Open Access