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In present paper p-type GaPAs whiskers doped with Cu were obtained by VLS method in close bromine system. The whiskers have various morphologies and geometries: imperfect needle-like crystals, ribbons, perfect needle-lik...

Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied. It was suggested that when Zr (4d25s2) atoms were introdu...

Semiconductor lasers (SLs) that are subject to delayed optical feedback and external optical injection have been demonstrated to perform information processing using the photonic reservoir computing paradigm. Optical inj...

The rapid advancement of perovskite-based optoelectronics devices has caught the world’s attention due to their outstanding properties, such as long carrier lifetime, low defect trap density, large absorption coefficie...

A new material of strontium tetraaquad[N, N'-bis(salicylidene)semicarbazidatocobalt(II)] dihydrate (I) with the following composition: Sr[CoL'(Н2О)2]22Н2О, where H3L = N,N'-bis(salicylidene)semicarbazide was synthesi...

Designing and engineering microresonator dispersion are essential for generating microresonator frequency comb. Microresonator frequency combs (microcombs, Kerr frequency combs) offer the potential for various attractive...

The evolution of non-equilibrium carriers excited in the process of decay of surface plasmon polaritons (SPPs) in metal is described for each step – from the generation of carriers to their extraction from the metal. T...

Abstract The Boltzmann transport equation is the basic equation for solving the transport of charge carrier (electrons, holes) problems in semiconductor devices. The distribution function has been obtained from the solut...

Semiconductor planar microcavities significantly enhance the interaction between light and matter and are thus crucial as a fundamental research platform for investigations of quantum information processing, quantum dyna...