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This paper presents a comprehensive review of Medium Voltage (MV) Wind Energy Conversion Systems (WECS) with the integration of Wide-bandgap (WBG) semiconductor devices. With the growing demand for high-power offshore wi...

This review discusses organic semiconductors interfaced with biomolecular systems, focusing on the construction of material systems through biochemical pathways for device nanoarchitectonics. The initial section highligh...

In this research the application of nanomaterials, nanocomposites reformed in semiconductor and chip sectors by fabricating them resulted in better performance compared to previous studies. These developed materials has ...

Ultrathin ohmic contacts were fabricated on GaP(111) single crystals using argon ion (Ar⁺) implantation at an energy of E₀ = 2 keV and a dose of D = 2 × 10¹⁷ cm⁻², under high vacuum conditions (10⁻⁷ Pa). P...

Abstract Multi-level inverters (MLIs) are also used in relatively high-power systems; but the goals of low overall harmonic distortion (THD) and fewer power semiconductor devices remain a design issue of serious difficul...

Abstract In the post-Moore era, single-walled carbon nanotubes (SWCNTs) have emerged as promising candidates for next-generation semiconductor materials due to their unique optoelectronic properties. Achieving high-purit...

Hydrogen is widely recognized as a clean and sustainable energy carrier, driving the urgent need for safe and efficient solid-state storage materials. In this study, the structural, thermodynamic, electronic, optical, an...

Abstract Transition metal dichalcogenide (TMD) solar cells are promising candidates for high-specific-power photovoltaics due to their strong light-matter interactions, such as their high absorption coefficients. The per...

Abstract Two-dimensional (2D) semiconductors enable atomically thin channels and attractive electrostatics, but practical scaling increasingly hinges on gate-dielectric integration rather than channel performance. A key ...

Graphene/Silicon (Gr/Si) Schottky photodetector combines the maturity of silicon technology with the excellent optoelectronic properties of graphene, offering advantages such as broad spectral coverage, hig...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...