Ultra-narrowband and highly-directional THz thermal emitters based on the bound state in the continuum

The development of novel and cost-effective THz emitters, with properties superior to current THz sources, is an active and important field of research. In this work, we propose and numerically demonstrate a simple yet effective approach of realizing terahertz sources working in continuous-wave form, by incorporating the new physics of bound state in the continuum (BIC) into thermal emitters. By deliberately designing the structure of slotted disk array made of high-resistivity silicon on top of a low index dielectric buffer layer supported by a conducting substrate, a quasi-BIC mode with ultra-high quality factor (∼104) can be supported. Our results reveal that the structure can operate as an efficient terahertz thermal emitter with near-unity emissivity and ultranarrow bandwidth. For example, an emitter working at 1.3914 THz with an ultranarrow linewidth less than 130 MHz, which is roughly 4 orders of magnitude smaller than that obtained from a metallic metamaterial-based thermal emitter, is shown. In addition to its high monochromaticity, this novel emitter has additional important advantages including high directionality and linear polarization, which makes it a promising candidate as the new generation of THz sources. It holds a great potential for practical applications where high spectral resolving capability is required.