← Volver a resultados
Ficha bibliográfica · Consulta y acceso
Artículo de revista

Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors

Moein Shamoushaki et al · Nature Portfolio · 2026

Material complementario disponible
Lectura rápida. Revisá los datos básicos del recurso y luego accedé al contenido desde el botón principal. En esta ficha solo se muestra la información necesaria para identificar la obra, citarla y abrirla.
Publicación seriada

3D scan-based classification of Chinese young female hand morphology

Esta publicación seriada contiene 688 contenidos relacionados.

Acceso al recurso

Entrá al contenido desde la opción principal o elegí otra fuente disponible.

Acceso principal

Material complementario disponible

El enlace apunta a material asociado, anexos, tablas, datos o página complementaria. No se marca como libro/texto completo.
Abrir material

Resumen

Descripción general del contenido del recurso.

Abstract This is the first study which presents integrated geo-spatial prospective life cycle and supply chain sustainability modelling of two compound semiconductors: Indium Gallium Nitride (InGaN) and Indium Gallium Phosphide (InGaP), in 80 international supply chain scenarios, incorporating 11 countries across 4-time horizons—024, 2030, 2040 and 2050. The results show environmental sustainability is geographic- and time- dependent and varied by properties of the supply chain characteristics. The manufacturing of InGaN and InGaP excel in UK based scenarios (~ 70% and 66% impact reduction from 2040 to 2050). Scenarios involving shared fabrication in the UK and US show strong sustainability performance in 2024, those for fabrication in Taiwan (for both materials) and US (InGaN) demonstrate increasing sustainability potential by 2050. Scenarios involving fabrication in China consistently led to a higher environmental impact. However, all 80 configurations demonstrate marked reductions in environmental impacts, primarily due to global electricity grid decarbonisation, and improved emissions controls. Despite this improvement in the clean room energy impact, epitaxial growth and substrate preparation remain the hotspots, calling for process innovation, cleaner precursors (e.g., replacing arsine or phosphine), and advanced material recycling. InGaN generally performs better than InGaP in most categories, attributed to its simpler material inputs and lower toxicity potential. InGaP scenarios exhibit higher marine ecotoxicity, carcinogenic toxicity, and mineral resource scarcity, driven by complex chemistries and Gallium Arsenide (GaAs) substrates. Interestingly, InGaP scenarios significantly outperform InGaN in stratospheric ozone depletion due to limited use of halogenated chemicals. This study provides compelling evidence to support reshoring or nearshoring of compound semiconductor fabrication to regions with cleaner energy profiles and stronger environmental regulations. Scenarios involving the UK, USA and Taiwan (specially in 2050), consistently achieve higher sustainability scores across global warming, toxicity, and resource depletion categories.

Cómo citar

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

al, M. S. E. (2026). Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors. https://doi.org/10.1038/s41598-026-43622-5

MLA

al, Moein Shamoushaki et. "Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors." 2026. https://doi.org/10.1038/s41598-026-43622-5.

Chicago

al, Moein Shamoushaki et. 2026. "Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors.". https://doi.org/10.1038/s41598-026-43622-5.

Harvard

al, M. S. E. 2026, Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors, Nature Portfolio, available at: https://doi.org/10.1038/s41598-026-43622-5 [Accessed 28 Jun. 2026].

Compartir e imprimir

Guardá la ficha, copiá su enlace permanente o imprimila como PDF.

Exportar referencia

Si usás un gestor bibliográfico, podés exportar el registro en los formatos más comunes.

Detalles del recurso

Información bibliográfica útil para confirmar que se trata del material correcto.

Título
Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors
Autor / colaboradores
Moein Shamoushaki et al
Editorial
Nature Portfolio
Año de publicación
2026
ISSN
2045-2322
ISSN
2045-2322
Idioma
eng
Copiado