Electric-field-induced magnetization reorientation in a (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with out-of-plane anisotropy

Combined electric- and magnetic-field control of magnetization orientation and reversal is studied using anomalous Hall effect in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer. Its anisotropy results from the electrically tunable competition between the in-plane and out-of-plane anisotropies of both layers. The magnetic hysteresis loop shape is sensitive to the bias electric field. In the loop reversible part, an electric-field variation is found to reorient reversibly the magnetization. In this case, the magnetization direction follows the easy anisotropy direction controlled by electric field. In contrast, in the hysteretic part, an almost complete nonreversible magnetization reversal is achieved. This is interpreted as resulting from the electric-field-induced enhancement of domain nucleation and domain-wall propagation. Fil: Cormier, M.. Universite Paris Sud; Francia. Laboratoire de Photonique et de Nanostructures; Francia Fil: Jeudy, V.. Universite Paris Sud; Francia