Synthesis, structural, electrokinetic and energy state properties of ZrNi1-хVxSn solid solution

The samples of ZrNi_{1-<em>х</em>}V<em>_x</em>Sn solid solution (<em>x</em> = 0–0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics of the ZrNi_{1-<em>х</em>}V<em>_x</em>Sn semiconducting solid solution were investigated in the temperature range <em>T</em> = 80–400 K. An analysis of behavior of the electrokinetic and energetic characteristics, in particular, the motion rate of the Fermi level, Δ<em>ε</em>_F/Δ<em>x</em> for ZrNi_1-<em>x</em>V<em>_x</em>Sn, allows to assume about the simultaneous generation of the structural defects of donor and acceptor nature in the crystal. The additional researches are required to establish the mechanisms of donor generation.