A compact plasmonic MOS-based 2×2 electro-optic switch
Ye Chenran et al · Wiley · 2015
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integrated circuits and data routing applications. The device features a
plasmonic metal-oxide-semiconductor (MOS) mode for enhanced
light-matter-interactions. The switching mechanism originates from a
capacitor-like design where the refractive index of the active medium,
indium-tin-oxide, is altered via shifting the plasma frequency due to carrier
accumulation inside the waveguide-based MOS structure. This light manipulation
mechanism controls the transmission direction of transverse magnetic polarized
light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7)
dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage
bias. The ultrafast broadband fJ/bit device allows for seamless integration with
silicon-on-insulator platforms for low-cost manufacturing.
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APA 7
al, Y. C. E. (2015). A compact plasmonic MOS-based 2×2 electro-optic switch. https://doi.org/10.1515/nanoph-2015-0010
MLA
al, Ye Chenran et. "A compact plasmonic MOS-based 2×2 electro-optic switch." 2015. https://doi.org/10.1515/nanoph-2015-0010.
Chicago
al, Ye Chenran et. 2015. "A compact plasmonic MOS-based 2×2 electro-optic switch.". https://doi.org/10.1515/nanoph-2015-0010.
Harvard
al, Y. C. E. 2015, A compact plasmonic MOS-based 2×2 electro-optic switch, Wiley, available at: https://doi.org/10.1515/nanoph-2015-0010 [Accessed 22 Jun. 2026].
Detalles del recurso
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- Título
- A compact plasmonic MOS-based 2×2 electro-optic switch
- Autor / colaboradores
- Ye Chenran et al
- Editorial
- Wiley
- Año de publicación
- 2015
- ISSN
- 2192-8606
- ISSN
- 2192-8606
- Idioma
- eng
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