Progress of optically pumped GaSb based semiconductor disk laser

Shu Shili et al · Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China · 2018

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Autor / responsable

Shu Shili et al

Editorial

Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China

Año

2018

ISSN

2096-4579

ISSN

2096-4579

Idioma

eng

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This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.

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APA 7

al, S. S. E. (2018). Progress of optically pumped GaSb based semiconductor disk laser. https://doi.org/10.29026/oea.2018.170003

MLA

al, Shu Shili et. "Progress of optically pumped GaSb based semiconductor disk laser." 2018. https://doi.org/10.29026/oea.2018.170003.

Chicago

al, Shu Shili et. 2018. "Progress of optically pumped GaSb based semiconductor disk laser.". https://doi.org/10.29026/oea.2018.170003.

Harvard

al, S. S. E. 2018, Progress of optically pumped GaSb based semiconductor disk laser, Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China, available at: https://doi.org/10.29026/oea.2018.170003 [Accessed 29 Jun. 2026].

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Título: Progress of optically pumped GaSb based semiconductor disk laser

Autor / colaboradores: Shu Shili et al

Editorial: Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China

Año de publicación: 2018

ISSN: 2096-4579

ISSN: 2096-4579

Idioma: eng

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semiconductor disk laser; gasb based; 2 μm wavelength