Light emitters based on CdTe doped with isovalent impurities

The problems of developing light-emitting structures based on CdTe with an extended range of operating temperatures and radiation-resistant parameters are studied. A technique for obtaining heterostructures has been mastered, technological modes of isovalent substitution have been determined, and radiation sources with a high quantum efficiency η = 7–20% at 300 K in a wide spectral region have been obtained. The design of devices has been developed and light emitters based on CdTe, whose radiation is determined by the interband recombination of free charge carriers and the dominant annihilation of bound excitons, have been fabricated by doping with isovalent impurities Mg, Ca.