Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of indium ion implantion in P-N Junction silicon semiconductor sample , which has been prepared by using pulse dense plasma focus . Such determination was depend on the chemical shift of the silicon spectrum. The prepared sample was scraped until the above noted chemical shift was disappeared. From this technique the depth of indium doped in the silicon sample was found to be about 450 A° .