Edge Absorption of (Y_0.06Ga_0.94)₂O₃ Thin Films

<span>Fundamental absorption edge of (Y</span>_0.06<span>Ga</span>_0.94<span>)</span>₂<span>O</span>₃<span> thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed in the monoclinic structure of β-Ga</span>₂<span>O</span>₃<span>. The optical band gap of these films is greater than β-Ga</span>₂<span>O</span>₃<span> films and is 4.66 eB for films annealed in oxygen atmosphere, 4.77 eV for the films annealed in argon atmosphere and 4.87 eV for the films, restored in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in (Y</span>_0.06<span>Ga</span>_0.94<span>)</span>₂<span>O</span>₃<span> films after annealing and after reconstitution in hydrogen was estimated. It was found that the concentration of charge carriers after annealing in oxygen atmosphere is 1.32×10¹⁸ cm</span>^-3<span>, after annealing in argon atmosphere - 3.41×10¹⁸ cm</span>^-3<span> and after reconstitution in hydrogen is 5.20×10¹⁸ </span>cm^-3<span>, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in (Y</span>_0.06<span>Ga</span>_0.94<span>)</span>₂<span>O</span>₃<span> thin films is caused by Burstein-Moss effect. </span><strong><br />Key words</strong><span>: gallium and yttrium oxide, thin films, fundamental absorption edge.</span>