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Influence of growth impurities on thermal defect formation in monocrystalline silicon

Yu.V. Pavlovskyy et al · Vasyl Stefanyk Carpathian National University · 2021

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Autore / responsabile
Yu.V. Pavlovskyy et al
Editore
Vasyl Stefanyk Carpathian National University
Anno
2021
ISSN
1729-4428
ISSN
1729-4428
Lingua
Inglés

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The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.

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APA 7

al, Y. P. E. (2021). Influence of growth impurities on thermal defect formation in monocrystalline silicon. https://doi.org/10.15330/pcss.22.3.437-443

MLA

al, Yu.V. Pavlovskyy et. "Influence of growth impurities on thermal defect formation in monocrystalline silicon." 2021. https://doi.org/10.15330/pcss.22.3.437-443.

Chicago

al, Yu.V. Pavlovskyy et. 2021. "Influence of growth impurities on thermal defect formation in monocrystalline silicon.". https://doi.org/10.15330/pcss.22.3.437-443.

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al, Y. P. E. 2021, Influence of growth impurities on thermal defect formation in monocrystalline silicon, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.22.3.437-443 [Accessed 9 Aug. 2026].

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Titolo
Influence of growth impurities on thermal defect formation in monocrystalline silicon
Autore / collaboratori
Yu.V. Pavlovskyy et al
Editore
Vasyl Stefanyk Carpathian National University
Anno di pubblicazione
2021
ISSN
1729-4428
ISSN
1729-4428
Lingua
Inglés

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monocrystalline silicon; oxygen; carbon; magnetic susceptibility; microhardness; heat treatment
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