Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2

Artículo

Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2

Tong Mingyu et al · Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China · 2020

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Autor / responsable

Tong Mingyu et al

Editorial

Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China

Año

2020

ISSN

2096-4579

ISSN

2096-4579

Idioma

eng

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Helicity-dependent ultrafast spin current generated by circularly polarized photons in topological materials holds the crux to many technological improvements, such as quantum communications, on-chip communication processing and storage. Here, we present the manipulation of helicity-dependent terahertz emission generated in a nodal line semimetal candidate Mg3Bi2 by using photon polarization states. The terahertz emission is mainly ascribed to the helicity-dependent photocurrent that is originated from circular photogalvanic effects, and the helicity-independent photocurrent that is attributed to linear photogalvanic effect. Our work will inspire more explorations into novel nodal line semimetals and open up new opportunities for developing ultrafast optoelectronics in the topological system.

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APA 7

al, T. M. E. (2020). Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2. https://doi.org/10.29026/oea.2020.200023

MLA

al, Tong Mingyu et. "Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2." 2020. https://doi.org/10.29026/oea.2020.200023.

Chicago

al, Tong Mingyu et. 2020. "Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2.". https://doi.org/10.29026/oea.2020.200023.

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al, T. M. E. 2020, Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2, Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China, available at: https://doi.org/10.29026/oea.2020.200023 [Accessed 29 Jun. 2026].

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Título: Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2

Autor / colaboradores: Tong Mingyu et al

Editorial: Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China

Año de publicación: 2020

ISSN: 2096-4579

ISSN: 2096-4579

Idioma: eng

Materias

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terahertz; spin photocurrent; nodal-line semimetal; topological material