Formation of Nanoclusters on the Adsorbed Surface under the Action of Comprehensive Pressure and Electric Field

In the paper, the influence of the electric field and the comprehensive pressure on the conditions of formationand the period of the surface superlattice of adatoms in semiconductors is investigated. It is established that inGaAs semiconductor, an increase in the comprehensive pressure and the electric field strength, depending on thedirection, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), atwhich the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed n-GaAssemiconductor, the increase of the electric field strength leads to a monotonous change (decrease or increasedepending on the direction of the electric field) of the period of self-organized surface nanostructures of adatoms.The period of nanometer structure of the adatoms depending on the value of comprehensive pressure,temperature, average concentration of the adatoms and conduction electrons is defined. It is established that theincrease in pressure leads to expansion of temperature intervals within which nanometer structures of the adatomsare formed, and the decrease of their period.