Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

Artículo

Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

S. P. Novosyadlyj et al · Vasyl Stefanyk Carpathian National University · 2017

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Autor / responsable

S. P. Novosyadlyj et al

Editorial

Vasyl Stefanyk Carpathian National University

Año

2017

ISSN

1729-4428

ISSN

1729-4428

Idioma

eng

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This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2 . HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW. Keywords: bipolar transistor, heterojunction, gallium arsenide.

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APA 7

al, S. P. N. E. (2017). Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits. https://doi.org/10.15330/pcss.17.2.281-285

MLA

al, S. P. Novosyadlyj et. "Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits." 2017. https://doi.org/10.15330/pcss.17.2.281-285.

Chicago

al, S. P. Novosyadlyj et. 2017. "Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits.". https://doi.org/10.15330/pcss.17.2.281-285.

Harvard

al, S. P. N. E. 2017, Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.17.2.281-285 [Accessed 1 Jul. 2026].

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Título: Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

Autor / colaboradores: S. P. Novosyadlyj et al

Editorial: Vasyl Stefanyk Carpathian National University

Año de publicación: 2017

ISSN: 1729-4428

ISSN: 1729-4428

Idioma: eng