Novità Aiuto Accesso istituzionale
Torna ai risultati
Scheda bibliografica · Consultazione e accesso
Artículo

Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

T. Benko et al · Vasyl Stefanyk Carpathian National University · 2019

Materiale supplementare disponibile
Lettura rapida. Controlla i dati essenziali della risorsa e accedi al contenuto con il pulsante principale. La scheda mostra solo le informazioni necessarie per identificare, citare e aprire l’opera.
Autore / responsabile
T. Benko et al
Editore
Vasyl Stefanyk Carpathian National University
Anno
2019
ISSN
1729-4428
ISSN
1729-4428
Lingua
Inglés

Accesso alla risorsa

Apri il contenuto dall’opzione principale o scegli un’altra fonte disponibile.

DOAJ DOAJ Articles
Entrar por DOAJ
Accesso principale

Materiale supplementare disponibile

El enlace apunta a material asociado, anexos, tablas, datos o página complementaria. No se marca como libro/texto completo.
Apri materiale

Riepilogo

Descripción general del contenido del recurso.

In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOItechnologyand the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), isanalyzed. It is known [3,4] that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminatethis disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substratewas propoused.

Come citare

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

al, T. B. E. (2019). Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications. https://doi.org/10.15330/pcss.20.3.311-317

MLA

al, T. Benko et. "Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications." 2019. https://doi.org/10.15330/pcss.20.3.311-317.

Chicago

al, T. Benko et. 2019. "Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications.". https://doi.org/10.15330/pcss.20.3.311-317.

Harvard

al, T. B. E. 2019, Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.20.3.311-317 [Accessed 8 Aug. 2026].

Condividi e stampa

Salva la scheda, copia il link permanente o stampala in PDF.

Esporta riferimento

Esporta il record nei formati più comuni per usarlo con un gestore bibliografico.

RIS BibTeX

Dettagli della risorsa

Informazioni bibliografiche utili per verificare che sia il materiale corretto.

Titolo
Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications
Autore / collaboratori
T. Benko et al
Editore
Vasyl Stefanyk Carpathian National University
Anno di pubblicazione
2019
ISSN
1729-4428
ISSN
1729-4428
Lingua
Inglés

Soggetti

Esplora risorse correlate a partire da questi soggetti.

арсенід галію польовий транзистор тепловий опір електрофізичне діагностування
Copiato