Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

Artículo

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

V. M. Sklyarchuk et al · Vasyl Stefanyk Carpathian National University · 2019

Acceso abierto al texto completo

Lectura rápida. Revisá los datos básicos del recurso y luego accedé al contenido desde el botón principal. En esta ficha solo se muestra la información necesaria para identificar la obra, citarla y abrirla.

Autor / responsable

V. M. Sklyarchuk et al

Editorial

Vasyl Stefanyk Carpathian National University

Año

2019

ISSN

1729-4428

ISSN

1729-4428

Idioma

Inglés

Acceso al recurso

Entrá al contenido desde la opción principal o elegí otra fuente disponible.

DOAJ DOAJ Articles

Entrar por DOAJ

Acceso principal

Acceso abierto al texto completo

Texto completo identificado como acceso abierto.

Abrir texto

Resumen

Descripción general del contenido del recurso.

The electrical characteristics of In-doped Cd0.9Zn0.1Te (CZT:In) crystals with concentration of Со=3,5*1017 cm-3, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced n-type conductivity and had a resistivity of (1¸2)*109 Ohm*cm at 293 K. In/CZT:In/In structures with ohmic contacts and Cr/CZT:In/In structures with Schottky barriers were created on this crystals. The temperature dependences of the resistivity in investigated material were analyzed and explained. The energy position of the deep level responsible for the material’ dark conductivity was found. Due to the study of the temperature dependence of currents limited by space-charge (SCLC) and of currents of the ohmic section of the volt-ampere characteristics (I-VC), the compensation degree of CZT:In crystals is determined. It was found that Cr/CZT:In/In structures with a Schottky diode, fabricated on crystals with a lower compensation degree, possessed the best detection properties than similar structures fabricated on crystals with a greater compensation degree.

Cómo citar

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

al, V. M. S. E. (2019). Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals. https://doi.org/10.15330/pcss.20.3.257-263

MLA

al, V. M. Sklyarchuk et. "Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals." 2019. https://doi.org/10.15330/pcss.20.3.257-263.

Chicago

al, V. M. Sklyarchuk et. 2019. "Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals.". https://doi.org/10.15330/pcss.20.3.257-263.

Harvard

al, V. M. S. E. 2019, Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.20.3.257-263 [Accessed 5 Aug. 2026].

Compartir e imprimir

Guardá la ficha, copiá su enlace permanente o imprimila como PDF.

Exportar referencia

Si usás un gestor bibliográfico, podés exportar el registro en los formatos más comunes.

RIS BibTeX

Detalles del recurso

Información bibliográfica útil para confirmar que se trata del material correcto.

Título: Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

Autor / colaboradores: V. M. Sklyarchuk et al

Editorial: Vasyl Stefanyk Carpathian National University

Año de publicación: 2019

ISSN: 1729-4428

ISSN: 1729-4428

Idioma: Inglés

Materias

Explorá otros recursos relacionados a partir de estas materias.

cd0.9zn0.1te:in омічний контакт струми сопз ступінь компенсації контакт шотткі