2D tellurene/black phosphorus heterojunctions based broadband nonlinear saturable absorber

Two-dimensional (2D) mono-elemental materials (Xenes) show remarkable potential in the fields of fundamental science and technology, have been regarded as a wide range of building blocks for electronic technologies due to their unique chemical, physical, electrical, and optical properties. Here, 2D tellurene/black phosphorus (Te/BP) heterojunctions are successfully fabricated through liquid-phase exfoliation (LPE) method. Their nonlinear optical absorption properties at 1.0, 2.0, and 2.8 μm have been studied by an open-aperture Z-scan method. The results revealed the excellent broadband saturable absorption responses of the prepared BP/Te heterojunctions, which are further confirmed by using them as saturable absorbers (SAs) for passively Q-switched all-solid-state lasers operating at 1.0, 2.0, and 2.8 μm, respectively. In particular, 1.04 μm continuous-wave (CW) mode-locked lasers with a pulse width of 404 fs is realized for the first time, to our best knowledge. Our work indicates that 2D Xenes especially 2D Xenes based heterojunctions have great potential in the fields of pulsed laser generation/modulation and other optoelectronic and photonic devices.