Effect of Microwave Radiation on the Band Structure and Electronic Parameters of the Heterosystems with Fullerenes

<span>The results of a complex study of C</span>₆₀<span>/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of external influences (ultraviolet irradiation, thermal annealing, gamma and microwave irradiation). The advantage of microwave treatment over others is established: the absence of fullerene decomposition, the removal of internal mechanical stresses in the heterosystem, and the improvement of its electronic parameters. Methods for remove the decomposition of C</span>₆₀<span> molecules under the influence of other treatments have been developed. To eliminate the interaction of fullerenes with oxygen, it was proposed to perform thermal annealing and UV irradiation in vacuum, and in the case of </span><img src="http://www.pu.if.ua/inst/phys_che/start/pcss/vol18/images/anote1802_04_htm_eqn4053.gif" border="0" alt="" /><span>-irradiation, apply a protective coating on the surface of the film (GeO</span>_x<span> or SiO</span>_x<span>). In solar cells with C</span>₆₀<span> films in the polymer matrix on Si, a significant advantage of titanium contacts in comparison with gold is established, especially after microwave treatment. Contact resistance decreased as a result of hybridization of 3d-orbitals of titanium and 2p-orbitals of fullerenes with the formation of ТіхС</span>₆₀<span>carbides and radiation-stimulated diffusion of metals, which increases the contact area. </span><br /><strong>Key words:</strong><span> fullerenes С</span>₆₀<span>, heterosystems, crystalline and band structure of the films, internal mechanical stresses, electronic parameters, thermal and radiation treatments.</span>