Electrical Conductivity and Magnetoresistance of Silicon Microstructures in The Vicinity to Metal-Insulator Transition

<p>Complex research of silicon microcrystals with specific resistance from ρ&lt;sub&gt;300K&lt;/sub&gt; = 0.025 Ohm × cm to ρ&lt;sub&gt;300K&lt;/sub&gt; =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectricand modified transition metal nickel nickel at low temperatures to the temperature of liquefied helium T= 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.</p><p><strong>Key words</strong>: jump conductivity; microcrystal; negative magnetic resistor; spin; cryogenic temperatures</p>