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Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques

Macchi, Carlos Eugenio et al · Elsevier · 2021

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Autore / responsabile
Macchi, Carlos Eugenio et al
Editore
Elsevier
Anno
2021
ISSN
2211-3797
ISSN
2211-3797
Lingua
Inglés

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We experimentally studied the formation of vacancy clusters and oxygen related defects in uranium oxide (UOx) thin films (<70 nm) changing the stoichiometry in the x = 2.2?3.5 range. Films were deposited on Si(0 0 1) by DC magnetron sputtering varying the substrate temperature (room temperature, 400 °C and 600 °C) and different relative O2 partial pressures in the argon-oxygen mixture. The different species of vacancy-like defects are identified by the combination of depth dependent positron annihilation techniques and by comparison of the experimental data with ab-initio calculations. In samples growth up to 400 °C substrate temperature, di- and tri- vacancies were formed whereas at higher temperature, hexa-vacancies and larger vacancy clusters appear. Film growth at increasing oxygen partial pressure was found not to be correlated with an increase of oxygen defects, but with the formation of more complex vacancy clusters. The presence of oxygen related defects is revealed by identifying preferential positron annihilations with oxygen electrons. Moreover, uranium vacancies inside vacancy clusters are identified by localization of positrons, in agreement with ab-initio calculations. Fil: Macchi, Carlos Eugenio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina Fil: Somoza, Alberto Horacio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina

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APA 7

Macchi, C. E. E. A. (2021). Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques. http://hdl.handle.net/11336/157479

MLA

Macchi, Carlos Eugenio et al. "Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques." 2021. http://hdl.handle.net/11336/157479.

Chicago

Macchi, Carlos Eugenio et al. 2021. "Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques.". http://hdl.handle.net/11336/157479.

Harvard

Macchi, C. E. E. A. 2021, Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques, Elsevier, available at: http://hdl.handle.net/11336/157479 [Accessed 8 Aug. 2026].

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Titolo
Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques
Autore / collaboratori
Macchi, Carlos Eugenio et al
Editore
Elsevier
Anno di pubblicazione
2021
ISSN
2211-3797
ISSN
2211-3797
Lingua
Inglés

Soggetti

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POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SUB-SUPERFICIAL DEFECTS DISTRIBUTION; THIN FILMS; URANIUM OXIDE; https://purl.org/becyt/ford/1.3; https://purl.org/becyt/ford/1
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