Electric and photoelectric properties of solid solutions Ag₂In₂Si(Ge)Se₆

<p>Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag&lt;sub&gt;2&lt;/sub&gt;In&lt;sub&gt;2&lt;/sub&gt;SiSe&lt;sub&gt;6&lt;/sub&gt; and Ag&lt;sub&gt;2&lt;/sub&gt;In&lt;sub&gt;2&lt;/sub&gt;GeSe&lt;sub&gt;6&lt;/sub&gt; single crystals are highresistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe&lt;sub&gt;2&lt;/sub&gt;-Si(Ge)Se&lt;sub&gt;2&lt;/sub&gt; when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag&lt;sub&gt;2&lt;/sub&gt;In&lt;sub&gt;2&lt;/sub&gt;SiSe&lt;sub&gt;6&lt;/sub&gt; and Ag&lt;sub&gt;2&lt;/sub&gt;In&lt;sub&gt;2&lt;/sub&gt;GeSe&lt;sub&gt;6&lt;/sub&gt; respectively.</p><p>Keywords: conductivity,Fermi level, activation energy, an amorphous semiconductor, photoconductivity.</p>