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Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect tr...

Abstract Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. T...

In this study, we investigated the degradation mechanisms of silicon carbide asymmetric trenches of metal-oxide semiconductor field-effect transistors (SiC AT-MOSFETs) under power cycling tests (PCTs). After 60000 cycles...

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large in...

Abstract The space microgravity environment, scarcely attainable on Earth, is considered to have a positive effect on crystal growth, especially the van der Waals layered materials with low interlayer sliding energy barr...

Abstract The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the fiel...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...