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Plasmonic structures are known to support the modes with sub-wavelength volumes in which the field/matter interactions are greatly enhanced. Coupling between the molecular excitations and plasmons leading to the formatio...

We describe structure localization and dissipative solitons in a semiconductor laser with a saturable absorber exhibiting gain/absorption recovery times shorter than the photon lifetime. Under assumptions compatible with...

Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied. It was suggested that when Zr (4d25s2) atoms were introdu...

Perovskite semiconductor nanocrystals have emerged as a promising family of materials for optoelectronic applications including light-emitting diodes, lasers, light-to-electricity convertors and quantum light emitters. T...

Atomically thin, two-dimensional, transition-metal dichalcogenide (TMD) monolayers have recently emerged as a versatile platform for optoelectronics. Their appeal stems from a tunable direct bandgap in the visible and ne...

In this paper, the mechanisms of mass transfer to In/CdTe systems under nanosecond pulsed laser irradiation, which are due to nonstationarity, nonequilibrium, physical and geometric nonlinearity, high speed and simultane...

La presente tesis se origina en la posibilidad de alcanzar una mejor comprensión microscópica y teórica del comportamiento de semiconductores-dopados en presencia de H, por medio de una versión de FPLMTO21 que ha mos...

El presente trabajo pretende contribuir a profundizar el entendimiento de propiedades estructurales, electrónicas y magnéticas en sistemas huésped-impureza, mediante el empleo combinado de estas técnicas experimental...

La búsqueda de semiconductores magnéticos con temperaturas de Curie por encima de temperatura ambiente obtuvo un nuevo impulso en la frontera de los milenios cuando a partir de cálculos teóricos se predijo que tales ...

Una meta fundamental que se propone en los métodos de estructura de bandas es poder determinar las propiedades electrónicas de los materiales, a partir de métodos de cálculos que utilizen la menor información experi...

Uno de los objetivos de este trabajo es la determinación de la magnitud y simetría del tensor GCE en óxidos semiconductores policristalinos y también la determinación de la orientación en el caso de óxidos monocri...

We present ab initio quantum-mechanical molecular-dynamics simulations of the liquid-metal--amorphous-semiconductor transition in Ge. Our simulations are based on (a) finite-temperature density-functional theory of the o...

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-c

Doctor en Física Universidad Nacional de La Plata Facultad de Ciencias Exactas

Materias / palabras clave: Photodissociation; Electrode; Semiconductor; Electrochemistry; Wavelength; Visible spectrum; Radiation; Materials science; Photochemistry; Optoelectronics; Chemistry; Optics

Materias / palabras clave: Semiconductor; Physics; Engineering physics; Optoelectronics

El motivo fundamental de esta Tesis es, a partir de un abordaje experimental, semiempírico y de primeros principios, aportar a la construcción de un modelo simple y a la vez confiable que dé cuenta de los orígenes de...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSynthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallitesC. B. Murray, D. J. Norris, and M. G. BawendiCite this...

Topological lasers have been intensively investigated as a strong candidate for robust single-mode lasers. A typical topological laser employs a single-mode topological edge state, which appears deterministically in a de...

Semiconductor lasers (SLs) that are subject to delayed optical feedback and external optical injection have been demonstrated to perform information processing using the photonic reservoir computing paradigm. Optical inj...

Ultrathin ohmic contacts were fabricated on GaP(111) single crystals using argon ion (Ar⁺) implantation at an energy of E₀ = 2 keV and a dose of D = 2 × 10¹⁷ cm⁻², under high vacuum conditions (10⁻⁷ Pa). P...

Abstract--The purpose of this study is to determine the characteristics of the transistor before it is used in the circuit. Transistors are semiconductor devices used as amplifiers, as circuit breakers and connectors (sw...