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Abstract Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. T...

Abstract High-electron-mobility transistors (HEMTs) based on wide bandgap (WBG) materials like gallium nitride (GaN) are vital for next-generation power electronics and high-frequency applications, offering high breakdow...

In this study, we investigated the degradation mechanisms of silicon carbide asymmetric trenches of metal-oxide semiconductor field-effect transistors (SiC AT-MOSFETs) under power cycling tests (PCTs). After 60000 cycles...

This paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodolog...

Abstract The space microgravity environment, scarcely attainable on Earth, is considered to have a positive effect on crystal growth, especially the van der Waals layered materials with low interlayer sliding energy barr...

In this research the application of nanomaterials, nanocomposites reformed in semiconductor and chip sectors by fabricating them resulted in better performance compared to previous studies. These developed materials has ...

Abstract The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the fiel...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...