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Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

S. P. Novosyadliy et al · Vasyl Stefanyk Carpathian National University · 2020

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Author / responsible party
S. P. Novosyadliy et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2020
ISSN
1729-4428
ISSN
1729-4428
Language
English

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In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

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APA 7

al, S. P. N. E. (2020). Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI. https://doi.org/10.15330/pcss.21.2.361-364

MLA

al, S. P. Novosyadliy et. "Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI." 2020. https://doi.org/10.15330/pcss.21.2.361-364.

Chicago

al, S. P. Novosyadliy et. 2020. "Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI.". https://doi.org/10.15330/pcss.21.2.361-364.

Harvard

al, S. P. N. E. 2020, Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.21.2.361-364 [Accessed 9 Aug. 2026].

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Title
Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI
Author / contributors
S. P. Novosyadliy et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2020
ISSN
1729-4428
ISSN
1729-4428
Language
English

Subjects

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electronics; lsi; schottky fet; modeling; gaas
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