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Small-signal transistor model in the design of microwave low-noise amplifiers

P. A. Yemtsev · Politekhperiodika · 2004

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Author / responsible party
P. A. Yemtsev
Publisher
Politekhperiodika
Year
2004
ISSN
3083-6530
ISSN
3083-6530
Language
English

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Summary

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A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range. The main aspects of model decomposition are described. An example of amplifier construction is given to verify the adequacy of the model.

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APA 7

Yemtsev, P. A. (2004). Small-signal transistor model in the design of microwave low-noise amplifiers. https://tkea.com.ua/index.php/journal/article/view/1109

MLA

Yemtsev, P. A. "Small-signal transistor model in the design of microwave low-noise amplifiers." 2004. https://tkea.com.ua/index.php/journal/article/view/1109.

Chicago

Yemtsev, P. A. 2004. "Small-signal transistor model in the design of microwave low-noise amplifiers.". https://tkea.com.ua/index.php/journal/article/view/1109.

Harvard

Yemtsev, P. A. 2004, Small-signal transistor model in the design of microwave low-noise amplifiers, Politekhperiodika, available at: https://tkea.com.ua/index.php/journal/article/view/1109 [Accessed 9 Aug. 2026].

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Resource details

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Title
Small-signal transistor model in the design of microwave low-noise amplifiers
Author / contributors
P. A. Yemtsev
Publisher
Politekhperiodika
Publication year
2004
ISSN
3083-6530
ISSN
3083-6530
Language
English

Subjects

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high electron mobility transistor; modeling; parameter determination
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