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Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it

A. I. Kondrik · Politekhperiodika · 2004

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Author / responsible party
A. I. Kondrik
Publisher
Politekhperiodika
Year
2004
ISSN
3083-6530
ISSN
3083-6530
Language
English

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Summary

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By means of computer modeling, the carrier lifetime and mobility, as well as the resistivity of CdxZn1–xTe:Cl material, were investigated in order to determine the optimal combination of these properties and the molar fraction of CdTe that would provide maximum charge collection efficiency in γ-radiation detectors based on this material. A typical impurity composition, independent of the preparation method, was taken as the starting point. It is shown that the studied material must be inhomogeneous, and an approximate distribution of its properties in the interelectrode space of the detector has been established.

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APA 7

Kondrik, A. I. (2004). Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it. https://tkea.com.ua/index.php/journal/article/view/1100

MLA

Kondrik, A. I. "Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it." 2004. https://tkea.com.ua/index.php/journal/article/view/1100.

Chicago

Kondrik, A. I. 2004. "Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it.". https://tkea.com.ua/index.php/journal/article/view/1100.

Harvard

Kondrik, A. I. 2004, Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it, Politekhperiodika, available at: https://tkea.com.ua/index.php/journal/article/view/1100 [Accessed 10 Aug. 2026].

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Title
Modeling of CdZnTe properties and parameters of γ-radiation detectors based on it
Author / contributors
A. I. Kondrik
Publisher
Politekhperiodika
Publication year
2004
ISSN
3083-6530
ISSN
3083-6530
Language
English

Subjects

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detectors; ionizing radiation; modeling; semiconductors
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