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A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime

A. Das et al · Sumy State University · 2026

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The possibility of a type-IIb diamond as the foundation for double-drift region (DDR) impact avalanche transit time (IMPATT) devices that operate at THz frequencies has been investigated. In this study, the large-signal (L-S) simulation model is employed. The top cut-off frequency for DDR type-IIb diamond IM-PATTs is 1.5 THz, while for Silicon (Si) IMPATTs, it is 0.5 THz. According to the Large signal simulation da-ta, the diamond IMPATT (DIMPATT) device exhibits a peak RF power of 891mW with an 11.02% conversion efficiency at 0.3 THz, taking voltage modulation of 50%. Whereas for Si IMPATTs the RF output power 173 mW with a 3% conversion efficiency is obtained for the same percentage of voltage modulation. A co-relative study has been presented for DDR IMPATT based on Si and type-IIb diamond, which shows the superiority of DIMPATT, in terms of power and DC to RF conversion efficiency at the THz domain.

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APA 7

al, A. D. E. (2026). A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime. https://doi.org/10.21272/jnep.18(1).01017

MLA

al, A. Das et. "A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime." 2026. https://doi.org/10.21272/jnep.18(1).01017.

Chicago

al, A. Das et. 2026. "A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime.". https://doi.org/10.21272/jnep.18(1).01017.

Harvard

al, A. D. E. 2026, A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime, Sumy State University, available at: https://doi.org/10.21272/jnep.18(1).01017 [Accessed 7 Aug. 2026].

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Title
A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime
Author / contributors
A. Das et al
Publisher
Sumy State University
Publication year
2026
ISSN
2077-6772
ISSN
2077-6772
Language
English

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