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Sensor for measuring cryogenic temperatures based on a transistor-sensitive element

M. M. Murshudli et al · Politekhperiodika · 2005

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Author / responsible party
M. M. Murshudli et al
Publisher
Politekhperiodika
Year
2005
ISSN
3083-6530
ISSN
3083-6530
Language
English

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The possibility of creating a gas analyzer based on an n-p-n bipolar transistor operating in the self-oscillation mode is considered. Within the operating temperature range from –20 to +50 °C and for NOx concentrations of 5–500 ppm, the dependence of oscillation frequency on concentration is linear. The detection capability is at the level of 3–5 ppm. The gas analyzer allows measurement of nitrogen oxide concentration within a few seconds. Structurally, it is designed as a compact device with dimensions of 150×85×25 mm.

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APA 7

al, M. M. M. E. (2005). Sensor for measuring cryogenic temperatures based on a transistor-sensitive element. https://tkea.com.ua/index.php/journal/article/view/1083

MLA

al, M. M. Murshudli et. "Sensor for measuring cryogenic temperatures based on a transistor-sensitive element." 2005. https://tkea.com.ua/index.php/journal/article/view/1083.

Chicago

al, M. M. Murshudli et. 2005. "Sensor for measuring cryogenic temperatures based on a transistor-sensitive element.". https://tkea.com.ua/index.php/journal/article/view/1083.

Harvard

al, M. M. M. E. 2005, Sensor for measuring cryogenic temperatures based on a transistor-sensitive element, Politekhperiodika, available at: https://tkea.com.ua/index.php/journal/article/view/1083 [Accessed 9 Aug. 2026].

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Resource details

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Title
Sensor for measuring cryogenic temperatures based on a transistor-sensitive element
Author / contributors
M. M. Murshudli et al
Publisher
Politekhperiodika
Publication year
2005
ISSN
3083-6530
ISSN
3083-6530
Language
English

Subjects

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gas analyzer; gas-sensitive element; self-oscillations; nitrogen oxides; gas-sensitive transistor
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