Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study
Abhay P. Srivastava et al · Springer · 2026
Resource access
Open the content from the main option or choose another available source.
Supplementary material available
Summary
Descripción general del contenido del recurso.
How to cite
Elegí el formato que necesitás y copiá la referencia al portapapeles.
APA 7
al, A. P. S. E. (2026). Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study. https://doi.org/10.1007/s44371-026-00701-w
MLA
al, Abhay P. Srivastava et. "Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study." 2026. https://doi.org/10.1007/s44371-026-00701-w.
Chicago
al, Abhay P. Srivastava et. 2026. "Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study.". https://doi.org/10.1007/s44371-026-00701-w.
Harvard
al, A. P. S. E. 2026, Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study, Springer, available at: https://doi.org/10.1007/s44371-026-00701-w [Accessed 8 Aug. 2026].
Resource details
Bibliographic information to help confirm that this is the correct material.
- Title
- Electronic structure and band-edge engineering of Sc-doped g-C₃N₄: a first-principles study
- Author / contributors
- Abhay P. Srivastava et al
- Publisher
- Springer
- Publication year
- 2026
- ISSN
- 3005-1193
- ISSN
- 3005-1193
- Language
- English
Subjects
Explore related resources through these subjects.