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Artículo

A compact plasmonic MOS-based 2×2 electro-optic switch

Ye Chenran et al · Wiley · 2015

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Author / responsible party
Ye Chenran et al
Publisher
Wiley
Year
2015
ISSN
2192-8606
ISSN
2192-8606
Language
English

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We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

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APA 7

al, Y. C. E. (2015). A compact plasmonic MOS-based 2×2 electro-optic switch. https://doi.org/10.1515/nanoph-2015-0010

MLA

al, Ye Chenran et. "A compact plasmonic MOS-based 2×2 electro-optic switch." 2015. https://doi.org/10.1515/nanoph-2015-0010.

Chicago

al, Ye Chenran et. 2015. "A compact plasmonic MOS-based 2×2 electro-optic switch.". https://doi.org/10.1515/nanoph-2015-0010.

Harvard

al, Y. C. E. 2015, A compact plasmonic MOS-based 2×2 electro-optic switch, Wiley, available at: https://doi.org/10.1515/nanoph-2015-0010 [Accessed 9 Aug. 2026].

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Title
A compact plasmonic MOS-based 2×2 electro-optic switch
Author / contributors
Ye Chenran et al
Publisher
Wiley
Publication year
2015
ISSN
2192-8606
ISSN
2192-8606
Language
English

Subjects

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optical switching device; plasmonics; electrooptic switch; photonic integrated circuits; silicon photonics
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