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Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Kumar Kalapala Akhil Raj et al · Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China · 2020

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Author / responsible party
Kumar Kalapala Akhil Raj et al
Publisher
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
Year
2020
ISSN
2096-4579
ISSN
2096-4579
Language
English

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We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.

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APA 7

al, K. K. A. R. E. (2020). Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates. https://doi.org/10.29026/oea.2020.190025

MLA

al, Kumar Kalapala Akhil Raj et. "Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates." 2020. https://doi.org/10.29026/oea.2020.190025.

Chicago

al, Kumar Kalapala Akhil Raj et. 2020. "Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates.". https://doi.org/10.29026/oea.2020.190025.

Harvard

al, K. K. A. R. E. 2020, Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates, Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China, available at: https://doi.org/10.29026/oea.2020.190025 [Accessed 9 Aug. 2026].

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Title
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Author / contributors
Kumar Kalapala Akhil Raj et al
Publisher
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
Publication year
2020
ISSN
2096-4579
ISSN
2096-4579
Language
English

Subjects

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optically pumped; algan; uv edge emitting laser; aln substrate
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