Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

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Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

Slah Sheet et al · University of Mosul, College of Education for Pure Science · 2008

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Author / responsible party

Slah Sheet et al

Publisher

University of Mosul, College of Education for Pure Science

Year

2008

ISSN

1812-125X

ISSN

1812-125X

Language

English

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Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of indium ion implantion in P-N Junction silicon semiconductor sample , which has been prepared by using pulse dense plasma focus . Such determination was depend on the chemical shift of the silicon spectrum. The prepared sample was scraped until the above noted chemical shift was disappeared. From this technique the depth of indium doped in the silicon sample was found to be about 450 A° .

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APA 7

al, S. S. E. (2008). Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique. https://doi.org/10.33899/edusj.2008.51284

MLA

al, Slah Sheet et. "Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique." 2008. https://doi.org/10.33899/edusj.2008.51284.

Chicago

al, Slah Sheet et. 2008. "Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique.". https://doi.org/10.33899/edusj.2008.51284.

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al, S. S. E. 2008, Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique, University of Mosul, College of Education for Pure Science, available at: https://doi.org/10.33899/edusj.2008.51284 [Accessed 8 Aug. 2026].

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Title: Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

Author / contributors: Slah Sheet et al

Publisher: University of Mosul, College of Education for Pure Science

Publication year: 2008

ISSN: 1812-125X

ISSN: 1812-125X

Language: English

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ion implementation; depth measurement; doped ions