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Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element

A.A. Druzhinin et al · Vasyl Stefanyk Carpathian National University · 2021

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Author / responsible party
A.A. Druzhinin et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2021
ISSN
1729-4428
ISSN
1729-4428
Language
English

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The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different control options for sub-channel areas of MOS transistors are modeled in the LTSpice program. Based on the simulation results, dependencies graphs of the output signal amplitude on the resistance of a sensitive element and sensor’s sensitivity are drawn, and the shapes of the output signals are shown.

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APA 7

al, A. D. E. (2021). Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element. https://doi.org/10.15330/pcss.22.4.729-733

MLA

al, A.A. Druzhinin et. "Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element." 2021. https://doi.org/10.15330/pcss.22.4.729-733.

Chicago

al, A.A. Druzhinin et. 2021. "Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element.". https://doi.org/10.15330/pcss.22.4.729-733.

Harvard

al, A. D. E. 2021, Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.22.4.729-733 [Accessed 7 Aug. 2026].

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Title
Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element
Author / contributors
A.A. Druzhinin et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2021
ISSN
1729-4428
ISSN
1729-4428
Language
English

Subjects

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resistive sensor; inverter; mos transistor; subchannel area; signal; amplitude
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