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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>

Andrea Splendiani; L. Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi Yung Chim; Giulia Galli; Feng Wang · Nano Letters · 2010

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Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

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APA 7

Splendiani, A, Sun, L, Zhang, Y, Li, T, Kim, J, Chim, C. Y, Galli, G, & Wang, F. (2010). Emerging Photoluminescence in Monolayer MoS2. https://doi.org/10.1021/nl903868w

MLA

Splendiani, Andrea, et al. "Emerging Photoluminescence in Monolayer MoS2." 2010. https://doi.org/10.1021/nl903868w.

Chicago

Splendiani, Andrea, L. Sun, Yuanbo Zhang, Tianshu Li, Jonghwan Kim, Chi Yung Chim, Giulia Galli, and Feng Wang. 2010. "Emerging Photoluminescence in Monolayer MoS2.". https://doi.org/10.1021/nl903868w.

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Splendiani, A. et al. 2010, Emerging Photoluminescence in Monolayer MoS2, Nano Letters, available at: https://doi.org/10.1021/nl903868w [Accessed 8 Aug. 2026].

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Title
Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Author / contributors
Andrea Splendiani; L. Sun; Yuanbo Zhang; Tianshu Li; Jonghwan Kim; Chi Yung Chim; Giulia Galli; Feng Wang
Publisher
Nano Letters
Publication year
2010
Language
English

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