Electrical and optical numerical modeling of DP-PPV based polymer light emitting diode

Abstract In this paper, an in-depth study of the electrical and optical characteristics of Polymer Light Emitting Diodes ITO/PEDOT: PSS/DP-PPV derivatives/Al(Ca) is presented. Three polymer materials are considered; poly(2,3-diphenyl-5-(4-heptyloxy-4'-oxytrimethylenediphenyl)-phenylenevinylene) (P1), poly(2,3-diphenyl-5-[4-(4-pentylcyclohexyl)phenoxy]-propyl-p-phenylene vinylene) (P2) and poly(2,3-diphenyl-5-(2-(1, 4, 5-triphenyl-1H-2-imidazoloyl)-1-oxytrimethylene phenyl) phenylene vinylene) (P3). The J-V characteristics are investigated using a device model which includes the injection, transport, and recombination mechanisms. The electron and hole mobility of each material are fitted to experimental data. The charge balance factor CBF, the external quantum efficiency EQE, the Langevin recombination rates and the singlet exciton densities profiles are studied. The results are found to be in a good agreement with experimental data especially in the low current densities region, indicating that these PLEDs electrons mobility affects greatly the J-V characteristics compared with holes mobility, and that is because electrons band offset smaller than that of holes. The best performance is obtained with P1 device with a CBF value of almost unity and an EQE still low (4.7 %) but similar to other PPVs and MEH-PPVs based devices.