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Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

Meng Linghai et al · Wiley · 2019

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Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

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APA 7

al, M. L. E. (2019). Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials. https://doi.org/10.1515/nanoph-2019-0320

MLA

al, Meng Linghai et. "Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials." 2019. https://doi.org/10.1515/nanoph-2019-0320.

Chicago

al, Meng Linghai et. 2019. "Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials.". https://doi.org/10.1515/nanoph-2019-0320.

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al, M. L. E. 2019, Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials, Wiley, available at: https://doi.org/10.1515/nanoph-2019-0320 [Accessed 7 Aug. 2026].

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Title
Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials
Author / contributors
Meng Linghai et al
Publisher
Wiley
Publication year
2019
ISSN
2192-8606
ISSN
2192-8606
Language
English

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