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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

T. Dietl; Hideo Ohno; F. Matsukura; J. Cibért; D. Ferrand · Science · 2000

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Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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APA 7

Dietl, T, Ohno, H, Matsukura, F, Cibért, J, & Ferrand, D. (2000). Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors. https://doi.org/10.1126/science.287.5455.1019

MLA

Dietl, T, et al. "Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors." 2000. https://doi.org/10.1126/science.287.5455.1019.

Chicago

Dietl, T, Hideo Ohno, F. Matsukura, J. Cibért, and D. Ferrand. 2000. "Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors.". https://doi.org/10.1126/science.287.5455.1019.

Harvard

Dietl, T. et al. 2000, Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors, Science, available at: https://doi.org/10.1126/science.287.5455.1019 [Accessed 6 Aug. 2026].

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Title
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
Author / contributors
T. Dietl; Hideo Ohno; F. Matsukura; J. Cibért; D. Ferrand
Publisher
Science
Publication year
2000
Language
English

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