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Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

He Rui et al · Wiley · 2021

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Wide-bandgap (wide-E g, ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

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APA 7

al, H. R. E. (2021). Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule. https://doi.org/10.1515/nanoph-2020-0634

MLA

al, He Rui et. "Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule." 2021. https://doi.org/10.1515/nanoph-2020-0634.

Chicago

al, He Rui et. 2021. "Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule.". https://doi.org/10.1515/nanoph-2020-0634.

Harvard

al, H. R. E. 2021, Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule, Wiley, available at: https://doi.org/10.1515/nanoph-2020-0634 [Accessed 7 Aug. 2026].

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Title
Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule
Author / contributors
He Rui et al
Publisher
Wiley
Publication year
2021
ISSN
2192-8614
ISSN
2192-8614
Language
English

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