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Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

T. Benko et al · Vasyl Stefanyk Carpathian National University · 2019

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Author / responsible party
T. Benko et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2019
ISSN
1729-4428
ISSN
1729-4428
Language
English

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In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOItechnologyand the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), isanalyzed. It is known [3,4] that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminatethis disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substratewas propoused.

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APA 7

al, T. B. E. (2019). Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications. https://doi.org/10.15330/pcss.20.3.311-317

MLA

al, T. Benko et. "Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications." 2019. https://doi.org/10.15330/pcss.20.3.311-317.

Chicago

al, T. Benko et. 2019. "Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications.". https://doi.org/10.15330/pcss.20.3.311-317.

Harvard

al, T. B. E. 2019, Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.20.3.311-317 [Accessed 7 Aug. 2026].

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Title
Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications
Author / contributors
T. Benko et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2019
ISSN
1729-4428
ISSN
1729-4428
Language
English

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арсенід галію польовий транзистор тепловий опір електрофізичне діагностування
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